Leakage current in thin-films Ta2O5 on Si - Is it a limiting factor for nanoscale dynamic memories?

Journal of Materials Science: Materials in Electronics

Volumn 14, Issue 10-12, 2003, Pages 671-675

  Atanassova, E ^a   Paskaleva, A ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRITICAL CURRENT DENSITY (SUPERCONDUCTIVITY); DYNAMIC RANDOM ACCESS STORAGE; LEAKAGE CURRENTS; THIN FILMS;

NANOSCALE DYNAMIC MEMORIES;

TANTALUM COMPOUNDS;

EID: 0242304443     PISSN: 09574522     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1026114717542     Document Type: Conference Paper

References (5)

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2. E. ATANASSOVA, Microel. Reliab. 39 (1999) 1185.
3. E. ATANASSOVA and T. DIMITROVA, in "Handbook of Surfaces and Interfaces of Materials", Vol. 4, edited by H. S. Nalwa (Academic Press, New York, London, Tokyo, 2001) p. 439.
4. R. WALLACE and G. WILK, MRS Bull. March (2002) p. 192.
5. H. IWAI and S. OHMI, Microel. Reliab. 42 (2002) 465.