Properties of amorphous and crystalline Ta2O5 thin films deposited on Si from a Ta(OC2H5)5 precursor

Journal of Applied Physics

Volumn 83, Issue 9, 1998, Pages 4823-4829

  Chaneliere, C ^a   Four, S ^a,b   Autran, J L ^a   Devine, R A B ^b   Sandler, N P ^c  

^a UNIVERSITÉ DE LYON   (France)

^b ORANGE LABS   (France)

^c LAM RESEARCH CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000449251     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367277     Document Type: Article

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