4H-SiC MIS structures using oxidized Ta2Si as high-k dielectric

Materials Research Society Symposium Proceedings

Volumn 815, Issue , 2004, Pages 211-216

  Perez Tomas A ^a   Godignon, P ^a   Mestres, N ^a   Tournier, D ^a   Montserrat, J ^a   Millan J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE MEASUREMENT; CARRIER MOBILITY; DIELECTRIC MATERIALS; DIFFUSION; ELECTRIC INSULATORS; MIXTURES; PERMITTIVITY; SILICA; SILICON CARBIDE; SPUTTER DEPOSITION; TANTALUM COMPOUNDS; THERMOOXIDATION; VOLTAGE MEASUREMENT; X RAY DIFFRACTION ANALYSIS;

CHANNEL MOBILITY; GATE DIELECTRICS; INSULATOR FILMS; METAL INSULATOR SEMICONDUCTOR STRUCTURES;

METAL INSULATOR BOUNDARIES;

EID: 12844270649     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-815-j3.2     Document Type: Conference Paper

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