Comparison between the properties of amorphous and crystalline Ta2O5 thin films deposited on Si

Microelectronics Reliability

Volumn 39, Issue 2, 1999, Pages 261-268

  Chaneliere, C ^a   Four, S ^a,b   Autran, J L ^a   Devine, R A B ^b  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANNEALING; BAND STRUCTURE; CRYSTALLINE MATERIALS; ELECTRON TUNNELING; FILM GROWTH; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; SEMICONDUCTING SILICON; TANTALUM COMPOUNDS; THIN FILMS;

POOLE-FRENKEL EFFECT;

DIELECTRIC FILMS;

EID: 0032634975     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(98)00218-2     Document Type: Article

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