Nanoscale characterization of the silicon dioxide-silicon carbide interface using elemental mapping by energy-filtered transmission electron microscopy

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 464-469

  Chang, K C ^a   Bentley, J ^b   Porter, L M ^a  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Energy filtered transmission electron microscopy (EFTEM); Excess carbon; Interface; Oxide; Silicon carbide (SiC); Transmission electron microscopy (TEM)

Indexed keywords

CHARACTERIZATION; ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); SEMICONDUCTOR GROWTH; SILICA; THERMOOXIDATION; TRANSMISSION ELECTRON MICROSCOPY;

ENERGY-FILTERED TRANSMISSION ELECTRON MICROSCOPY (EFTEM);

SILICON CARBIDE;

EID: 0037566739     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0179-y     Document Type: Conference Paper

References (18)

1. L.A. Lipkin, M.K. Das, and J.W. Palmour, in Silicon Carbide - Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.1.1 (2001).
2. M.K. Das, B.S. Um, and J.A. Cooper, Jr., Mater. Sci. Forum 338-342, 1069 (2000).
3. G. Pensl, M. Bassler, F. Ciobanu, V.V. Afanas'ev, H. Yano, T. Kimoto, and H. Matsunami, in Silicon Carbide - Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.2.1 (2001).
4. S. Wang, M. Di Ventra, S.G. Kim, and S.T. Pantelides, Phys. Rev. Lett. 86, 5946 (2001).
5. L. A. Lipkin, D.B. Slater, Jr., and J.W. Palmour, U.S. patent 5,972,801 (1999).
6. S.T. Pantelides, R. Buczjo, M.D. Ventra, S. Wang, S.G. Kim, S.J. Pennycook, G. Duscher, L.C. Feldman, K. McDonald, R.K. Chanana, R.A. Weller, J.R. Williams, G.Y. Chung, C.C. Tin, and T. Issacs-Smith, in Silicon Carbide - Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.3.1 (2001).
7. V.V. Afanas'ev, M. Bassler, G. Pensl, and M.J. Schulz, Phys. Status Solidi (a) 162, 321 (1997).
8. M. Bassler, G. Pensl, and V.V. Afanas'ev, Dia. Rel. Mater. 6, 1472 (1997).
9. L. Simon, L. Kubler, A. Ermolieff, and T. Billon, Phys. Rev. B 60, 5673 (1999).
10. C. Virojanadara and L.I. Johansson, Surf. Sci. 505, 358 (2002).
11. H.-F. Li, S. Dimitrijec, D. Sweatman, and H.B. Harrison, Mater. Sci. Forum. 338-342, 399 (2000).
12. J.R. Williams, G.Y. Chung, C.C. Tin, K. McDonald, D. Farmer, R.K. Chanana, R.A. Weller, S.T. Pantelides, O.W. Holland, M.K. Das, L.A. Lipkin, and L.C. Feldman, in Silicon Carbide - Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.5.1 (2001).
13. C.-Y. Lu, J.A. Cooper, Jr., G.Y. Chung, J.R. Williams, K. McDonald, and L.C. Feldman, Mater. Sci. Forum 389-393, 977 (2002).
14. K. Fukuda, S. Suzuki, T. Tanaka, and K. Arai, Appl. Phys. Lett. 76, 1585 (2000).
15. K.C. Chang, N.T. Nuhfer, L.M. Porter, and Q. Wahab, Appl. Phys. Lett. 77, 2186 (2000).
16. L. Reimer, Energy-Filtering Transmission Electron Microscopy (Berlin: Springer-Verlag, 1995), p. 387.
17. J. T. Wolan, B.A. Grayson, J. Kohlscheen, Y. Emirov, R. Schlaf, R. Swartz, and S.E. Saddow, J. Electron Mater. 31, 380 (2002).
18. R.N. Ghosh, S. Ezhilvalavan, B. Golding, S.M. Mukhopadhyay, N. Mahadev, P. Joshi, M.K. Das, and J.A. Cooper, Jr., in Silicon Carbide - Materials, Processing and Devices, ed. A. Agarwal, M.S. Kowronski, J.A. Cooper, Jr., and E. Janzen (Warrendale, PA: Materials Research Society), H3.7.1 (2001).