Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy

Journal of Applied Physics

Volumn 86, Issue 8, 1999, Pages 4316-4321

  Li, Hui Feng ^a   Dimitrijev, Sima ^a   Sweatman, Denis ^a   Harrison, H Barry ^a   Tanner, Philip ^a   Feil, Bill ^b  

^a GRIFFITH UNIVERSITY   (Australia)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000448572     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.371363     Document Type: Article

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