Slow-trap profiling of NO and N2O nitrided oxides grown on Si and SiC substrates

Microelectronics Reliability

Volumn 39, Issue 4, 1999, Pages 441-449

  Dimitrijev, Sima ^a   Tanner, Philip ^a   Harrison, H Barry ^a  

^a GRIFFITH UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

GROWTH (MATERIALS); INTERFACES (MATERIALS); NITROGEN OXIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

NITRIDATION; SLOW-TRAP PROFILING METHOD;

MOS CAPACITORS;

EID: 0032644154     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00022-0     Document Type: Article

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