Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing

Applied Physics Letters

Volumn 76, Issue 12, 2000, Pages 1585-1587

  Fukuda, K ^a   Suzuki, S ^a   Tanaka, T ^a   Arai, K ^b  

^a Ultra Low Loss Pwr Device TRB   (Japan)

^b ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000085307     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126103     Document Type: Article

References (16)

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