Wide bandgap GaN-based semiconductors for spintronics

Journal of Physics Condensed Matter

Volumn 16, Issue 7, 2004, Pages

  Pearton, S J ^a   Abernathy, C R ^a   Thaler, G T ^a   Frazier, R M ^a   Norton, D P ^a   Ren, F ^a   Park, Y D ^b   Zavada, J M ^c   Buyanova, I A ^d   Chen, W M ^d   Hebard, A F ^e  

^a University of Florida   (United States)

^b Seoul National University   (South Korea)

^c U S ARMY RESEARCH OFFICE   (United States)

^d LINKÖPING UNIVERSITY   (Sweden)

^e NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MAGNETIC SENSORS; SPINTRONICS;

CHARGE CARRIERS; ENERGY GAP; FERROMAGNETISM; LASERS; LIGHT POLARIZATION; MAGNETIC DEVICES; MAGNETIZATION; OPTIMIZATION; PHOTONS; SEMICONDUCTOR DOPING; SENSORS; TRANSISTORS;

GALLIUM NITRIDE;

EID: 12144288043     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/16/7/R03     Document Type: Review

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