AlN/AlGaN/GaN metal insulator semiconductor heterostructure field effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 7 A, 2002, Pages 4481-4483

  Cho, Dong Hyun ^a,b   Shimizu, Mitsuaki ^c,d   Ide, Toshihide ^e   Ookita, Hideyuki ^a   Okumura, Hajime ^d,e  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b Research and Development Association for Future Electron Devices   (Japan)

^c Ultra Low Loss Power Device Technology Research Body UPR   (Japan)

^d MEIJI UNIVERSITY   (Japan)

^e TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

AlGaN; AlN; GaN; HFET; MIS

Indexed keywords

HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; THRESHOLD VOLTAGE;

GATE LEAKAGE CURRENT; HETEROSTRUCTURE FIELD EFFECT TRANSISTOR;

MISFET DEVICES;

EID: 0036656260     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.4481     Document Type: Article

References (10)