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Physical Review Letters

Volumn 86, Issue 24, 2001, Pages 5593-5596

Ferromagnetism in magnetically doped III-V semiconductors

(2) Litvinov, V I a Dugaev, V K b,c

a Waveband Inc (United States)

b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS (Germany)

c INSTITUTE OF HYDROBIOLOGY (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ENERGY GAP; FERROMAGNETISM; MANGANESE; MOLECULAR DYNAMICS; PHASE TRANSITIONS; THERMAL EFFECTS;

ACCEPTOR LEVELS; EXCHANGE INTERACTION; FERROMAGNETIC CLUSTERS; MAGNETIC IMPURITY; TRANSITION TEMPERATURE; VALANCE BAND; VIRTUAL ELECTRON EXCITATIONS;

MAGNETIC SEMICONDUCTORS;

EID: 0035844583 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.5593 Document Type: Article

Times cited : (246)

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