Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H-SiC(0001) by reactive molecular-beam epitaxy

Applied Physics Letters

Volumn 82, Issue 13, 2003, Pages 2077-2079

  Dhar, S ^a   Brandt, O ^a   Trampert, A ^a   Daweritz L ^a   Friedland, K J ^a   Ploog, K H ^a   Keller, J ^b   Bescherten, B ^b   Guntherodt G ^b  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^b RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; FERROMAGNETISM; HIGH TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON CARBIDE; SPIN GLASS; SQUIDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

EPITAXIAL LAYERS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0037475014     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1564292     Document Type: Article

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