Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells

Applied Physics Letters

Volumn 78, Issue 23, 2001, Pages 3690-3692

  Nam, K B ^a   Li, J ^a   Kim, K H ^a   Lin, J Y ^a   Jiang, H X ^a  

^a KANSAS STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035806172     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1377317     Document Type: Article

References (14)

1. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, New York, 1997).
2. T. Someya, K. Hoshino, J. C. Harris, K. Tachibana, and Y. Arakawa, Appl. Phys. Lett. 77, 1336 (2000).
3. H. Hirayama and Y. Aoyagi, MRS Internet J. Nitride Semicond. Res. 4S1, G3.74 (1999).
4. A. Kinoshita, H. Hirayama, M. Ainoya, Y. Aoyagi, and A. Hirata, Appl. Phys. Lett. 77, 175 (2000).
5. http://www.phys.ksu.edu/area/GaNgroup/.
6. F. T. Vasko and A. V. Kuznetsov, Electronic States and Optical Transitions in Semiconductor Heterostructures (Springer, New York, 1999).
7. Semiconductors - Basic Data, edited by O. Madelung (Springer, Berlin, 1996), p. 86.
8. G. D. Chen, M. Smith, J. Y. Lin, H. X. Jiang, S.-H. Wei, M. Asif Khan, and C. J. Sun, Appl. Phys. Lett. 68, 2784 (1996).
9. A. Salvador, G. Liu, W. Kim, O. Aktas, A. Botchkarev, and H. Morkoc, Appl. Phys. Lett. 67, 3322 (1995).
10. M. F. MacMillan, L. L. Clemen, R. P. Devaty, W. J. Choyke, M. Asif Khan, J. N. Kuznia, and S. Krishnankutty, J. Appl. Phys. 80, 2378 (1996).
11. R. Cingolani, G. Coli, R. Rinaldi, L. Calcagnile, H. Tang, A. Botchkarev, W. Kim, A. Salvador, and H. Morkoc, Phys. Rev. B 56, 1491 (1997).
12. M. Smith, J. Y. Lin, H. X. Jiang, A. Salvador, A. Botchkarev, W. Kim, and H. Morkoc, Appl. Phys. Lett. 69, 2453 (1996).
13. H. X. Jiang, E. X. Ping, P. Zhou, and J. Y. Lin, Phys. Rev. B 41, 12949 (1990).
14. J. Shah, Ultrafast Spectroscopy of Semiconductors and Semiconductor Nanostructures (Springer, New York, 1996).