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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 7 B, 2001, Pages

Molecular beam epitaxy of wurtzite GaN-based magnetic alloy semiconductors

(5) Kuwabara, Seiji a Kondo, Tsuyoshi a Chikyow, Toyohiro b Ahmet, Parhat b Munekata, Hiroo a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Diluted magnetic semiconductors; GaN; III V compound semiconductors; Magnetic alloy semiconductors; Molecular beam epitaxy

Indexed keywords

CONCENTRATION (PROCESS); FERROMAGNETISM; GALLIUM NITRIDE; MAGNETIZATION; MOLECULAR BEAM EPITAXY; MORPHOLOGY; SUPERPARAMAGNETISM; SURFACE ROUGHNESS;

MAGNETIC ALLOY SEMICONDUCTORS;

MAGNETIC SEMICONDUCTORS;

EID: 0035878256 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.l724 Document Type: Article

Times cited : (88)

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