Ion-beam-produced damage and its stability in AlN films

Journal of Applied Physics

Volumn 92, Issue 7, 2002, Pages 3554-3558

  Kucheyev, S O ^a   Williams, J S ^a   Zou, J ^b   Jagadish, C ^a   Pophristic, M ^c   Guo, S ^c   Ferguson, I T ^c   Manasreh, M O ^d  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c EMCORE CORPORATION   (United States)

^d University of New Mexico   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DYNAMIC ANNEALING; HIGH DOSE; IRRADIATION TEMPERATURE; LATTICE DISORDERS; LIQUID NITROGEN TEMPERATURE; RUTHERFORD BACKSCATTERING/CHANNELING; SAPPHIRE SUBSTRATES; SINGLE-CRYSTAL WURTZITE; STRUCTURAL CHARACTERISTICS; STRUCTURAL DAMAGES;

HEAVY IONS; ION BEAMS; ION BOMBARDMENT; RAPID THERMAL ANNEALING; SAPPHIRE; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDE;

ALUMINUM NITRIDE;

EID: 18644386257     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1501746     Document Type: Article

References (22)

1. See, for example, a recent review by S. O. Kucheyev, J. S. Williams, and S. J. Pearton, Mater. Sci. Eng., R. 33, 51 (2001), and references therein. msr MIGIEA 0927-796X
2. J. C. Zolper, S. J. Pearton, C. R. Abernathy, and C. B. Vartuli, Appl. Phys. Lett. 66, 3042 (1995). apl APPLAB 0003-6951
3. C. B. Vartuli, S. J. Pearton, C. R. Abernathy, J. D. MacKenzie, and J. C. Zolper, J. Vac. Sci. Technol. B 13, 2293 (1995). jvb JVTBD9 0734-211X
4. A. Y. Polyakov, M. Shin, M. Skowronski, R. G. Wilson, D. W. Greve, and S. J. Pearton, Solid-State Electron. 41, 703 (1997). sel SSELA5 0038-1101
5. J. S. Williams, Mater. Sci. Eng., A 253, 8 (1998). msa MSAPE3 0921-5093
6. S. O. Kucheyev, J. S. Williams, J. Zou, S. J. Pearton, and Y. Nakagawa, Appl. Phys. Lett. 79, 602 (2001). apl APPLAB 0003-6951
7. S. O. Kucheyev, J. S. Williams, J. Zou, G. Li, C. Jagadish, M. O. Manasreh, M. Pophirstic, S. Guo, and I. T. Ferguson, Appl. Phys. Lett. 80, 787 (2002). apl APPLAB 0003-6951
8. S. J. Pearton, J. C. Zolper, R. J. Shul, and F. Ren, J. Appl. Phys. 86, 1 (1999). jap JAPIAU 0021-8979
9. S. Nakamura, in Properties, Processing, and Applications of Gallium Nitride and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC-IEE, London, 1999).
10. L. Cartz, F. G. Karioris, and R. A. Fournelle, Radiat. Eff. 54, 57 (1981). rae RAEFBL 0033-7579
11. S. J. Zinkle, L. L. Snead, W. S. Eatherly, J. W. Jones, and D. K. Hensley, Mater. Res. Soc. Symp. Proc. 540, 305 (1999). mrs MRSPDH 0272-9172
12. T. Yano and T. Iseki, Philos. Mag. Lett. 62, 83 (1990). pml PMLEEG 0950-0839
13. T. Yano, K. Ichikawa, M. Akiyoshi, and Y. Tachi, J. Nucl. Mater. 283, 947 (2000). jnu JNUMAM 0022-3115
14. J. P. Biersack and L. G. Haggmark, Nucl. Instrum. Methods A174, 257 (1980). nui NUIMAL 0029-554X
15. J. A. Van Vechten, in Radiation Effects in Semiconductors, IOP Conference Series 31, edited by N. B. Urli and J. W. Corbett (Institute of Physics, London, 1977), p. 441.
16. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, and G. Li, Phys. Rev. B 62, 7510 (2000). prb PRBMDO 0163-1829
17. S. O. Kucheyev, J. S. Williams, C. Jagadish, J. Zou, G. Li, and A. I. Titov, Phys. Rev. B 64, 035202 (2001). prb PRBMDO 0163-1829
18. S. J. Zinkle and C. Kinoshita, J. Nucl. Mater. 251, 200 (1997). jnu JNUMAM 0022-3115
19. K. Atobe, M. Okada, and M. Nakagawa, Nucl. Instrum. Methods Phys. Res. B 166, 57 (2000). nib NIMBEU 0168-583X
20. K. Atobe, M. Honda, N. Fukuoka, M. Okada, and M. Nakagawa, Jpn. J. Appl. Phys., Part 1 29, 150 (1990). jjb JAPNDE 0021-4922
21. M. Honda, K. Atobe, N. Fukuoka, M. Okada, and M. Nakagawa, Jpn. J. Appl. Phys., Part 2 29, L652 (1990). jjc JAPLD8 0021-4922
22. T. Yano, H. Miyazaki, and T. Iseki, J. Nucl. Mater. 230, 74 (1996). jnu JNUMAM 0022-3115