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Applied Physics Letters

Volumn 81, Issue 18, 2002, Pages 3365-3367

Band-edge photoluminescence of AlN epilayers

(5) Li, J a Nam, K B a Nakarmi, M L a Lin, J Y a Jiang, H X a

a KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND EDGE TRANSITION; BAND-EDGE EMISSIONS; BAND-EDGE PHOTOLUMINESCENCE; DEEP IMPURITIES; DEEP ULTRAVIOLET; EMISSION INTENSITY; OPTICAL QUALITIES; PL EMISSION; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES;

GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PHOTOLUMINESCENCE SPECTROSCOPY; SAPPHIRE;

EPILAYERS;

EID: 79955986820 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1518558 Document Type: Article

Times cited : (105)

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