High temperature (>400 K) ferromagnetism in III-V-based diluted magnetic semiconductor GaCrN grown by ECR molecular-beam epitaxy

Solid State Communications

Volumn 122, Issue 1-2, 2002, Pages 37-39

  Hashimoto, Masahiko ^a   Zhou, Yi Kai ^a   Kanamura, Masahito ^a   Asahi, Hajime ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A. Diluted magnetic semiconductor; A. GaCrN; A. GaN based semiconductor; B. Molecular beam epitaxy; D. Elecgtron cyclotron resonance; D. Ferromagnetism

Indexed keywords

FERROMAGNETISM; HIGH TEMPERATURE EFFECTS; MAGNETIC HYSTERESIS; MAGNETIC MATERIALS; MOLECULAR BEAM EPITAXY; PARAMAGNETIC RESONANCE; PHASE TRANSITIONS; SATURATION (MATERIALS COMPOSITION); SYNTHESIS (CHEMICAL); X RAY DIFFRACTION ANALYSIS;

DILUTED-MAGNETIC SEMICONDUCTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0036530707     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(02)00073-X     Document Type: Article

References (12)