Room-temperature magnetism in Cr-doped AlN semiconductor films

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2418-2420

  Yang, S G ^a   Pakhomov, A B ^a   Hung, S T ^a   Wong, C Y ^a  

^a HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ATOMIC FRACTIONS; CR-DOPED; KAPTON SUBSTRATE; MAGNETIC AND TRANSPORT PROPERTIES; REACTIVE CO-SPUTTERING; ROOM TEMPERATURE MAGNETISM; SEMICONDUCTOR FILMS; TEMPERATURE RANGE;

ALUMINUM NITRIDE; CRYSTAL STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC CONDUCTIVITY; MAGNETIC SEMICONDUCTORS; MAGNETISM; NITRIDES; SPUTTER DEPOSITION; TRANSPORT PROPERTIES;

CHROMIUM;

EID: 79956047981     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509475     Document Type: Article

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