Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy

Journal of Applied Physics

Volumn 92, Issue 9, 2002, Pages 4989-4993

  Polyakov, A Y ^a   Govorkov, A V ^a   Smirnov, N B ^a   Pashkova, N Y ^a   Thaler, G T ^b   Overberg, M E ^b   Frazier, R ^b   Abernathy, C R ^b   Pearton, S J ^b   Kim, Jihyun ^b   Ren, F ^b  

^a INSTITUTE OF RARE METALS   (Russian Federation)

^b University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP DONOR; MICRO-CATHODOLUMINESCENCE; MN CONCENTRATIONS; NATIVE-DEFECT DONORS; NITROGEN VACANCIES; OPTICAL AND ELECTRICAL PROPERTIES; SELF-COMPENSATION;

DEFECTS; EPITAXIAL GROWTH; MANGANESE; MOLECULAR BEAMS; SEMICONDUCTING GALLIUM; VACANCIES;

ELECTRIC PROPERTIES;

EID: 18744362190     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1510597     Document Type: Article

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