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Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2457-2460

Green electroluminescence from a Tb-doped AlN thin-film device on Si

(5) Lu, F a Carius, R a Alam, A b Heuken, M b Buchal, Ch a

a FORSCHUNGSZENTRUM JÜLICH (Germany)

b AIXTRON AG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ALN FILMS; DRIVE VOLTAGE; EL DEVICES; EMISSION LINES; GREEN LIGHT EMISSION; GREEN PHOTOLUMINESCENCE; LUMINESCENCE LIFETIME; NAKED-EYE; OPTICALLY ACTIVE; PEAK CONCENTRATIONS; POLYCRYSTALLINE; POSTIMPLANTATION ANNEALING; ROOM TEMPERATURE; SI (1 1 1); TB-DOPED; ZNO;

ION IMPLANTATION; LIGHT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON; THIN FILM DEVICES; X RAY DIFFRACTION; ZINC OXIDE;

ELECTROLUMINESCENCE;

EID: 0036732173 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1497461 Document Type: Article

Times cited : (27)

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