Comparative study on electrical properties of atomic layer deposited high-permittivity materials on silicon substrates

Thin Solid Films

Volumn 474, Issue 1-2, 2005, Pages 222-229

  Duenas S ^a   Castan H ^a   Garcia H ^a   Barbolla, J ^a   Kukli, K ^b,c   Ritala, M ^b   Leskela M ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

Atomic layer deposition; Dielectrics; Electrical properties and measurements; Metal oxide semiconductor structure (MOS)

Indexed keywords

CAPACITANCE; ELECTRIC POTENTIAL; FILM GROWTH; MOS DEVICES; PERMITTIVITY; SILICA; SILICON; SUBSTRATES;

ATOMIC LAYER DEPOSITION (ALD); DEPOSITION CYCLES; ELECTRICAL PROPERTIES AND MEASUREMENTS; SOLID SURFACES;

DIELECTRIC MATERIALS;

EID: 10844223528     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.09.012     Document Type: Article

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