Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors

Organic Electronics

Volumn 3, Issue 2, 2002, Pages 65-72

  Bartic, Carmen ^a   Jansen, Henri ^a,b   Campitelli, Andrew ^a   Borghs, Staf ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Low voltage; Organic transistor; Poly(3 hexylthiophene); Ta2O5

Indexed keywords

DEPOSITION; ELECTRON BEAMS; EVAPORATION; GATES (TRANSISTOR); INSULATING MATERIALS; PERMITTIVITY; SEMICONDUCTING ORGANIC COMPOUNDS; TANTALUM COMPOUNDS; THICKNESS MEASUREMENT; THIN FILM TRANSISTORS; VLSI CIRCUITS;

LOW VOLTAGE; ORGANIC THIN FILM TRANSISTORS (OTFT); ORGANIC TRANSISTORS; POLY(3-HEXYLTHIOPHENE); TA2O5;

DIELECTRIC MATERIALS;

EID: 0013102366     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1566-1199(02)00034-4     Document Type: Article

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