Experimental observation of conductance transients in Al/SiNx:H/Si metal-insulator-semiconductor structures

Applied Physics Letters

Volumn 71, Issue 6, 1997, Pages 826-828

  Duenas S ^a,b   Pelaez, R ^a   Castan, E ^a   Pinacho, R ^a   Quintanilla, L ^a   Barbolla, J ^a   Martil, I ^a,c   Gonzalez Diaz, G ^a,c  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b LUCENT TECHNOLOGIES   (United States)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPOSITION; CRYSTAL DEFECTS; DEPOSITION; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICON NITRIDE; STOICHIOMETRY; THIN FILMS;

CONDUCTANCE TRANSIENTS; DISORDER INDUCED GAP STATE CONTINUUM MODEL; ELECTRON CYCLOTRON RESONANCE PLASMA METHOD; METAL INSULATOR SEMICONDUCTOR STRUCTURE;

ELECTRIC RESISTANCE;

EID: 0031207293     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119658     Document Type: Article

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