Chlorine mobility during annealing in N2 in ZrO2 and HfO2 films grown by atomic layer deposition

Journal of Applied Physics

Volumn 92, Issue 12, 2002, Pages 7675-7677

  Ferrari, Sandro ^a   Scarel, G ^a   Wiemer, C ^a   Fanciulli, M ^a  

^a LABORATORIO MDM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; FILM GROWTH; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY;

ATOMIC LAYER DEPOSITION (ALD);

DIELECTRIC FILMS;

EID: 0037115698     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1521802     Document Type: Article

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