Conductance transient, capacitance-voltage and deep-level transient spectroscopy characterization of atomic layer deposited hafnium and zirconium oxide thin films

Solid-State Electronics

Volumn 47, Issue 10, 2003, Pages 1623-1629

  Duenas S ^a   Castan H ^a   Barbolla, J ^a   Kukli, K ^b,c   Ritala, M ^b   Leskela M ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSITY OF HELSINKI   (Finland)

^c UNIVERSITY OF TARTU   (Estonia)

Author keywords

Disordered induced gap states; High k dielectrics; Interface states; Metal insulator semiconductor (MIS)

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CONDUCTANCE; PERMITTIVITY; THIN FILMS;

ATOMIC LAYER DEPOSITION (ALD);

ZIRCONIA;

EID: 0042093584     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00172-2     Document Type: Conference Paper

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