SIMS depth profiling of advanced gate dielectric materials

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 409-413

  Bennett, J ^a   Gondran, C ^a   Sparks, C ^a   Hung, P Y ^a   Hou, A ^a  

^a SEMATECH   (United States)

Author keywords

Gate dielectrics; HfO 2; Oxynitride; Roughening; ZrO 2

Indexed keywords

DIFFUSION; ELECTRODES; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SPUTTERING; SURFACE ROUGHNESS; THIN FILMS;

GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 0037438022     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00690-6     Document Type: Conference Paper

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