Characterization of high-k gate dielectric films using SIMS

Applied Surface Science

Volumn 203-204, Issue , 2003, Pages 516-519

  Yamamoto, T ^a   Morita, N ^a   Sugiyama, N ^a   Karen, A ^a   Okuno, K ^a  

^a TORAY RESEARCH CENTER INC   (Japan)

Author keywords

Gate dielectric; HfO 2; HfSiO x; High k; RSF; SIMS

Indexed keywords

DIFFUSION; SECONDARY ION MASS SPECTROMETRY; SILICA; SUBSTRATES; ULTRATHIN FILMS;

GATE DIELECTRICS;

DIELECTRIC FILMS;

EID: 0037438064     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00725-0     Document Type: Conference Paper

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