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Journal of Electronic Materials

Volumn 28, Issue 12, 1999, Pages 1414-1419

Preparation and properties of Ta2O5 film capacitors using TiSi2 bottom electrode

(3) Yang, H S a Choi, Y S b Cho, S M a

a Sungkyunkwan University (South Korea)

b Daewoo Electronics Co (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRODES; LEAKAGE CURRENTS; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SILICON WAFERS; TANTALUM COMPOUNDS; THERMAL EFFECTS; TITANIUM COMPOUNDS;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); TANTALUM OXIDE; TITANIUM SILICIDE;

CAPACITORS;

EID: 0033280972 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-999-0132-9 Document Type: Article

Times cited : (2)

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