Interface quality study of ECR-deposited and rapid thermal annealed silicon nitride A1/SiNx:H/InP and A1/SiNx:H/ in0.53Ga0.47As structures by DLTS and conductance transient techniques

Microelectronics Reliability

Volumn 40, Issue 4-5, 2000, Pages 845-848

  Castan H ^a   Duenas S ^a   Barbolla, J ^a   Redondo, E ^b   Blanco, N ^b   Martil I ^b   Gonzalez Diaz G ^b  

^a UNIVERSITY OF VALLADOLID   (Spain)

^b UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; CRYSTAL DEFECTS; DIELECTRIC FILMS; ELECTRIC CONDUCTANCE; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RAPID THERMAL ANNEALING; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE;

INTERFACIAL STATE DENSITY;

MIS DEVICES;

EID: 8644277297     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(99)00325-X     Document Type: Article

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