A numerical comparison between MOS control and junction control high voltage devices in SiC technology

Solid-State Electronics

Volumn 47, Issue 4, 2003, Pages 607-615

  Mihaila, A ^a   Udrea, F ^a   Brezeanu, G ^b   Amaratunga, G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

Author keywords

Oxide breakdown; SiC JFET; SiC trench MOSFET; SiC Si cascode configuration; Transient analysis

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

JUNCTION CONTROL DEVICES;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0037397145     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00185-5     Document Type: Article

References (38)

1. Palmour J.W., Singh R., Glass R.C., Kordina O., Carter C.H. Jr. Silicon carbide for power devices. ISPSD. 1997;25-32.
2. Casady J.B., Johnson R.W. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: a review. Solid-State Electron. 39(10):1996;1409-1422.
3. Agarwal A.K., Casady J.B., Rowland C.B., Walek W.F., White M.H., Brandt C.D. 1.1 kV 4H-SiC power UMOSFET. IEEE Electron. Dev. Lett. 18(12):1997;586-588.
4. Wright N.G., Johnson C.M., O'Neill A.G. Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulations. Solid-State Electron. 43:1999;515-520.
5. Sugawara Y., Asano K. 1.4 kV 4H-SiC UMOSFET with low specific on-resistance. ISPSD. 1998;119-122.
6. Bhatnagar M., Baliga B.J. Comparison of 6H-SiC, 3C-SiC and Si for power devices. IEEE Trans. Electron. Dev. 40(3):1993;645-655.
7. 2 interface in 4H-SiC Appl. Phys. Lett. 77(20):2000;3281-3283.
8. 2 interface Appl. Phys. Lett. 76(3):2000;336-338.
9. Schorner R., Friedrichs P., Peters D., Stephani D. Significantly improved performance of MOSFETs in silicon carbide using the 15R-SiC polytype. IEEE Electron. Dev. Lett. 20(5):1999;242-244.
10. 2 interface Appl. Phys. Lett. 76(16):2000;2250-2252.
11. Shenoy P.M., Baliga B.J. Analysis and optimisation of the planar 6H-SiC ACCUFET. Solid-State Electron. 43:1999;213-220.
12. Tab J., Cooper J.A. Jr., Melloch M.R. High voltage accumulation-layer UMOSFET in 4H-SiC. Electron. Dev. Lett. 19(12):1998;487-489.
13. Yano H., Hirao T., Kimoto T., Matsunami H., Asano K., Sugawara Y. High channel mobility in inversion layers of 4H-SiC UMOSFETs by utilising (1. 1 2 0) face Electron. Dev. Lett. 20(12):1999;611-613.
14. Yano H., Hirao T., Kimoto T., Matsunami H. A cause for highly improved channel mobility of 4H-SiC metal-oxide-semiconductor field-effect transistors on the (1. 1 2 0) face Appl. Phys. Lett. 78(3):2001;374-376.
15. 2 /SiC on (1120) and (0001) Si. Mat. Sci. Forum. 353-6:2001;627-630.
16. Lipkin L.A., Palmour J.W. SiC devices with ONO stacked dielectrics. Mat. Sci. Forum. 338-342:2000;1093-1096.
17. Ogino S., Oikawa T., Ueno K. Channel doped SiC-MOSFETs. Mat. Sci. Forum. 338-342:2000;1101-1104.
18. Agarwal A.K., Siergiej R.R., Seshadri S., White M.H., McMullin P.G., Burk A.A.et al. A critical look at the performances advantages and limitations of 4H-SiC power UMOSFET structures. ISPSD. 1996;119-122.
19. Agarwal A.K., Seshadri S., Rowland L.B. Temperature dependence of Fowler-Nordheim current in 6H- and 4H-SiC MOS capacitors. IEEE Electron. Dev. Lett. 18(12):1997;592-594.
20. 2 structures Appl. Phys. Lett. 77(16):2000;2560-2562.
21. Mihaila A., Udrea F., Brezeanu G., Azar R., Amaratunga G. SiC junction control, an alternative to MOS control high voltage switching devices. Mat. Sci. Forum. 353-356:2001;723-726.
22. Friedrichs P., Burte E.P., Schorner R. Dielectric strength of thermal oxides on 6H-SiC and 4H-SiC. Appl. Phys. Lett. 65(13):1994;1665-1667.
23. 2 /SiC interface J. Appl. Phys. 79(6):1996;3042-3045.
24. Lipkin L.A., Palmour J.W. Insulator investigation on SiC for improved reliability. IEEE Trans. Electron. Dev. 46(3):1999;525-532.
25. Mitlehner H., Bartsch W., Donke K.O., Friedrichs P., Kaltschmidt R., Weinert U.et al. Dynamic characteristic of high voltage 4H-SiC vertical JFET. ISPSD. 1999;339-342.
26. Friedrichs P., Mitlehner H., Donke K.O., Peters D., Schorner R., Weinert U.et al. SiC power devices with low on-resistance for fast switching applications. ISPSD. 2000;213-216.
27. Friedrichs P., Mitlehner H., Kaltschmidt R., Weinert U., Bartsch W., Hecht C.et al. Static and dynamic characteristics of 4H-SiC JFETs designed for different blocking categories. Mat. Sci. Forum. 338-342:2000;1243-1246.
28. Deboy G, Husken H, Mitlehner H, Rupp R. A comparison of modern power devices concepts for high voltage applications: FS-IGBT, compensation devices and SiC devices. Private communication; 2000.
29. Ruff M., Mitlehner H., Helbig R. SiC devices: physics and numerical simulations. IEEE Trans. Electron. Dev. 41(6):1994;1040-1054.
30. Shams S.F., Sundaram K.B., Chow L.C. Simulation of silicon carbide power MOSFETs at high temperature. Solid-State Electron. 43:1999;367-374.
31. Elford A., Mawby P.A. The numerical modelling of silicon carbide high power semiconductor devices. Microelectron. J. 30:1999;527-534.
32. Huang A.Q., Zhang B. Comparing SiC switching power devices: MOSFET NPN transistor and GTO thyristor. Solid-State Electron. 44:2000;325-340.
33. Wang J., Williams B.W. Evaluation of high-voltage 4H-SiC switching devices. IEEE Trans. Electron. Dev. 46(3):1999;589-597.
34. Baliga B.J. Power semiconductor devices. 1996;PWS Publishing Company.
35. Selberherr S. Analysis and simulation of semiconductor devices. Springer, p. 984.
36. Konstantinov A.O., Wahab Q., Nordell N., Lindefeld U. Ionisation rates and critical fields in 4H silicon carbide. Appl. Phys. Lett. 71(1):1997;90-92.
37. Trajkovik T. PhD thesis, University of Cambridge, March 2001.
38. Lorenz L., Deboy G., Knapp A., Marz M. COOLMOS. ™ - A new milestone in high voltage Power MOS ISPSD. 1999;3-10.