CoolMOS - a new milestone in high voltage power MOS

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 3-10

  Lorenz, L ^a   Deboy, G ^a   Knapp, A ^a   Maerz, M ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CAPACITANCE; ELECTRIC LOSSES; ELECTRIC POTENTIAL; GATES (TRANSISTOR); MOSFET DEVICES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BLOCKING VOLTAGE; INSULATED GATE BIPOLAR TRANSISTORS; POWER MOSFETS; SWITCHING LOSSES;

POWER ELECTRONICS;

EID: 0032598956     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (8)