SiC junction control, an alternative to MOS control high voltage switching devices

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 723-726

  Mihaila, A ^a   Udrea, F ^a   Brezeanu, G ^b   Azar, R ^a   Amaratunga, G ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF BUCHAREST   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ENERGY GAP; GATES (TRANSISTOR); JUNCTION GATE FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTOR JUNCTIONS;

DIELECTRIC BREAKDOWN; HIGH VOLTAGE SWITCHING DEVICE;

SILICON CARBIDE;

EID: 0035129578     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.4028/www.scientific.net/msf.353-356.723     Document Type: Article

References (9)

1. M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices, vol. 40 (1993), p. 645
2. J. W. Palmour et al., Proc. ISPSD (1997), p. 25
3. M. Ruff et al., IEEE Trans. Electron Devices, vol. 41 (1994), p. 1040
4. A. K. Agarwal et al., Proc. of ISPSD (1996), p. 119
5. T. Iwasaki et al., Proc. ISPSD (1997), p. 149
6. H. Mitlehner et al., Proc. ISPSD (1999), p.339
7. P. Friedrichs et al., Proc. ISPSD (2000), p. 213
8. A. Mihaila et al., Proc. Int. Semic. Conf., Sinaia (1999), p. 191
9. F. Udrea et al., IEEE Electron Devices Letters, vol. 20 (1999), p. 428