Cell geometry optimisation of 4H-SiC power UMOSFETs by electrothermal simulation

Solid-State Electronics

Volumn 43, Issue 3, 1999, Pages 515-520

  Wright, N G ^a   Johnson, C M ^a   O'Neill, A G ^a  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

Author keywords

4H SiC UMOSFET; Electrothermal simulation

Indexed keywords

COMPUTATIONAL GEOMETRY; COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRIC RESISTANCE; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

CELL GEOMETRY OPTIMIZATION; ELECTROTHERMAL SIMULATIONS;

MOSFET DEVICES;

EID: 0033099834     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00286-X     Document Type: Article

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