Channel doped SiC-MOSFETs

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Ogino, Shinji ^a   Oikawa, Tadaaki ^a   Ueno, Katsunori ^a  

^a FUJI ELECTRIC CO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ION IMPLANTATION; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; THRESHOLD VOLTAGE;

CHANNEL MOBILITY; COULOMB SCATTERING;

SILICON CARBIDE;

EID: 18844464619     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

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3. S.T. Sheppard, M.R. Melloch, and J.A. Cooper, Jr., IEEE Trans. Electron Devices, Vol.41, No.7 (1994) pp.1257-1264.
4. K. Ueno, Proceedings of the 7th Int. Conf. On Silicon Carbide, III-nitrides and Related Materials Stockholm, Sweden, September 1997, pp.845-848.
5. K. Ueno, R. Asai and T. Tsuji, IEEE Electron Dev. Lett., Vol.19, No.7 (1998) pp. 244-246.