Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor

Solid-State Electronics

Volumn 44, Issue 2, 2000, Pages 325-340

  Huang, Alex Q ^a   Zhang, Bo ^a  

^a State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; MOSFET DEVICES; SEMICONDUCTING SILICON COMPOUNDS; SWITCHING CIRCUITS; THYRISTORS; TRANSCONDUCTANCE;

CONDUCTION LOSS; FIGURE OF MERITS; SOFTWARE PACKAGE MEDICI; SWITCHING LOSS; SWITCHING POWER DEVICES;

POWER ELECTRONICS;

EID: 0034140439     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00239-7     Document Type: Article

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