Dynamic characteristics of high voltage 4H-SiC vertical JFETs

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 1999, Pages 339-342

  Mitlehner, Heinz ^a   Bartsch, Wolfgang ^a   Otto Dohnke, Karl ^a   Friedrichs, Peter ^a   Kaltschmidt, Rainer ^a   Weinert, Ulrich ^a   Weis, Benno ^a   Stephani, Dietrich ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; ELECTRIC VARIABLES MEASUREMENT; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SWITCHING SYSTEMS;

CASCODE CIRCUIT; VERTICAL JUNCTION FIELD EFFECT TRANSISTORS;

MOSFET DEVICES;

EID: 0032598883     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)