Numerical modelling of silicon carbide high power semiconductor devices

Microelectronics Journal

Volumn 30, Issue 6, 1999, Pages 527-534

  Elford, A ^a   Mawby, P A ^a  

^a SWANSEA UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RECTIFIERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SILICON CARBIDE;

HIGH VOLTAGE JUNCTION TERMINATION TECHNIQUES;

POWER ELECTRONICS;

EID: 0032635084     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(98)00175-X     Document Type: Article

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