Interface states of SiO2/SiC on (112̄0) and (0001) Si faces

Materials Science Forum

Volumn 353-356, Issue , 2001, Pages 627-630

  Yano, H ^a   Kimoto, T ^a   Matsunami, H ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE MEASUREMENT; CARRIER MOBILITY; EPITAXIAL GROWTH; MOS CAPACITORS; OXIDATION; SEMICONDUCTING SILICON; SILICA; SILICON CARBIDE; SUBSTRATES; SURFACE STRUCTURE; VOLTAGE MEASUREMENT;

ACCEPTOR LIKE INTERFACE STATE; CAPACITANCE VOLTAGE CHARACTERISTICS; CONDUCTION BAND; DRY OXIDATION; SHALLOW TRAP; WET OXIDATION;

INTERFACES (MATERIALS);

EID: 4244193339     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara, IEEE Electron Device Lett. 20 (1999), p.611.
2. H. Yano, T. Hirao, T. Kimoto, H. Matsunami, K. Asano and Y. Sugawara, Mater. Sci, Forum 338-342 (2000), p.1105.
3. J.N. Shenoy, M.K. Das, J.A. Cooper, Jr., M.R. Melloch and J.W. Palmour, J. Appl. Phys. 79 (1996), p.3042.
4. Z. Y. Chen, T. Kimoto, H. Matsunami, Jpn. J. Appl. Phys. 38 (1999), p.L1375.
5. M. Bassler, V. Afanas'ev, G. Pensl and M. Schulz, Mater. Sci. Forum 338-342 (2000), p.1065.