Simulation of silicon carbide power MOSFETs at high temperature

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 367-374

  Shams, S F ^a   Sundaram, K B ^a   Chow, L C ^a  

^a University of Central Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; SILICON CARBIDE; SIMULATORS;

DEVICE SIMULATORS;

MOSFET DEVICES;

EID: 0033079509     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00264-0     Document Type: Article

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