Critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures

IEEE International Symposium on Power Semiconductor Devices & ICs (ISPSD)

Volumn , Issue , 1996, Pages 119-122

  Agarwal, A K ^a   Siergiej, R R ^a   Seshadri, S ^a   White, M H ^a   McMullin, P G ^a   Burk, A A ^a   Rowland, L B ^a   Brandt, C D ^a   Hopkins, R H ^a  

^a WESTINGHOUSE ELECTRIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC FIELDS; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; POWER ELECTRONICS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE;

FOWLER NORDHEIM INJECTION; GATE INSULATORS; POLYSILICON GATES;

MOSFET DEVICES;

EID: 0029709968     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)