SCOPUS 정보 검색 플랫폼

Journal of Materials Science: Materials in Electronics

Volumn 13, Issue 11, 2002, Pages 633-642

Nitride-based long-wavelength lasers on GaAs substrates

(6) Alexandre, Francois a Gouardes, E a Gauthier Lafaye, O a Bouadma, N a Vuong, A a Thedrez, B a

a NOKIA RESEARCH CENTER (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; LASERS; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES;

LONG-WAVELENGTH LASERS;

MATERIALS SCIENCE;

EID: 0036863154 PISSN: 09574522 EISSN: None Source Type: Journal
DOI: 10.1023/A:1020658025863 Document Type: Article

Times cited : (8)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.