CBE and MOCVD growth of GaInNAs

Journal of Crystal Growth

Volumn 209, Issue 2-3, 2000, Pages 339-344

  Miyamoto, T ^a   Kageyama, T ^a   Makino, S ^a   Schlenker, D ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CHEMICAL BEAM EPITAXY; COMPOSITION EFFECTS; CRYSTAL GROWTH; DEGRADATION; HYDROGEN; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

DIMETHYLHYDRAZINE; GALLIUM INDIUM NITROGEN ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034140305     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00567-9     Document Type: Article

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