1.26μm GaInNAsSb-SQW lasers grown by gas-source MBE

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2001, Pages 342-345

  Shimizu, H ^a   Kumada, K ^a   Uchiyama, S ^a   Kasukawa, A ^a  

^a FURUKAWA ELECTRIC CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE LASERS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; QUANTUM WELL LASERS; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE ACTIVE AGENTS;

NARROW STRIPE LASERS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0034852016     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance
2. High-temperature characteristic in 1.3μm-range highly strained GaInNAs ridge lasers grown by metal-organic chemical vapor deposition
3. High-temperature operation up to 170°C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
4. Surfactants in epitaxial growth
5. Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant
6. Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28μm
7. 1.29μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance