GaInNAs/GaAs multiple quantum-wells (MQWs) for 1.3 μm laser applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 537-540

  Illek, S ^a   Borchert, B ^a   Ebbinghaus, G ^a   Egorov, A Yu ^a   Riechert, H ^a  

^a INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM INDIUM NITROGEN ARSENIDE;

METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

QUANTUM WELL LASERS;

EID: 0033722795     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (5)

1. M.Kondow, T.Kitatani, S.Nakatsuka, M.C.Larson, K.Nakahara, Y.Yazawa and K.Uomi, "GaInNAs: A Novel Material for Long-Wavelength Semiconductor Lasers", IEEE J. Sel. Topics in Quantum Electron., Vol. 3, pp.719-730, June 1997
2. F.Höhnsdorf, J.Koch, S.Leu, W.Stolz, B.Borchert and M.Druminski, "Reduced threshold current densities of (GaIn)(Nas)/GaAs single quantum well lasers for emission wavelenghts in the range 1.28-1.38μm", Electron. Lett., Vol. 35, pp.571-572, April 1999
3. S.Sato and S.Satoh, "1.3μm continuous-wave operation of GaInNAs lasers grown by metal organic chemical vapor deposition", Electron, Lett., Vol. 35, pp.1251-1252, July 1999
4. M.R.Gokhale, J.Wie, P.V.Studenkov, H.Wang, and S.R.Forrest, "High-Performance Long-Wavelength (λ ∼ 1.3μm) InGaAsPN Quantum-Well Lasers", IEEE Photon. Techn. Lett., Vol. 11, pp.952-954, August 1999
5. B.Borchert, A.Yu.Egorov, S.Illek and H.Riechert, "Static and dynamic characteristic of 1.29μm GaInNAs ridge-waveguide laser diodes", submitted to IEEE Photon. Techn. Lett., January 2000