Low-threshold and high-temperature operation of InGaAlAs-InP lasers

IEEE Photonics Technology Letters

Volumn 9, Issue 1, 1997, Pages 17-18

  Chen, T R ^a   Chen, P C ^a   Ungar, J ^a   Newkirk, M A ^a   Oh, S ^a   Bar Chaim, N ^a  

^a NOKIA RESEARCH CENTER   (United States)

Author keywords

Multiquantum well ridge waveguide laser diodes; Ridge waveguide lasers

Indexed keywords

CURRENT DENSITY; ELECTRIC VARIABLES MEASUREMENT; HIGH TEMPERATURE OPERATIONS; OPTICAL WAVEGUIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

MULTIQUANTUM WELL RIDGE WAVEGUIDE LASER DIODES; RIDGE WAVEGUIDE LASERS;

SEMICONDUCTOR LASERS;

EID: 0030784170     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.554156     Document Type: Article

References (5)

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2. C. E. Zah, R. Bhat, and T. P. Lee, "High temperature operation of AlGaInAs/InP lasers," in 7th Int. Conf. Indium Phosphide and Related Materials, Sapporo, Japan, May 9-13, 1995, pp. 14-17, paper WA 1.1.
3. M. C. Wang, W. Lin, T. T. Shi, and Y. K. Tu, "Ultrahigh temperature and ultra high speed operation of 1.3 μm strained-compensated AlGaInAs/InP uncooled laser diodes," Electron. Lett., vol. 31, no. 18, pp. 1584-1585.
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5. P. W. A. McIlroy, A. Kurobe and Y. Uematsu, "Analysis and applications of theoretical gain curves to the design of multi-quantum well lasers," IEEE J. Quantum Electron., vol. QE-21, pp. 1958-1963, 1985.