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Volumn 36, Issue 8, 2000, Pages 725-726

Low threshold lasing operation of narrow stripe oxide-confined GaInNAs/GaAs multiquantum well lasers at 1.28 μm

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTICAL WAVEGUIDES; PLASMA CONFINEMENT; PLASMA SOURCES; PULSED LASER APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0033877717     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000586     Document Type: Article
Times cited : (55)

References (7)
  • 2
    • 0032690362 scopus 로고    scopus 로고
    • Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in range 1.28-1.38μm
    • HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of (GaIn)(NAs)/GaAs single quantum well lasers for emission wavelengths in range 1.28-1.38μm', Electron. Lett., 1999, 35, pp. 571-572
    • (1999) Electron. Lett. , vol.35 , pp. 571-572
    • Höhnsdorf, F.1    Koch, J.2    Leu, S.3    Stolz, W.4    Borchert, B.5    Druminski, M.6
  • 4
    • 0033312505 scopus 로고    scopus 로고
    • 1.29μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance
    • BORCHERT, B., EGOROV, A.YU., ILLEK, S., KOMAINDA, M., and RIECHERT, H.: '1.29μm GaInNAs multiple quantum-well ridge-waveguide laser diodes with improved performance', Electron. Lett., 1999, 35, pp. 2204-2206
    • (1999) Electron. Lett. , vol.35 , pp. 2204-2206
    • Borchert, B.1    Egorov, A.Yu.2    Illek, S.3    Komainda, M.4    Riechert, H.5
  • 5
    • 0033335092 scopus 로고    scopus 로고
    • Highly-efficient laser with self-aligned waveguide and current confinement by selective oxidation
    • Paper WQ4
    • VAWTER, G.A., BLUM, O., ALLERMAN, A., and GAO, Y.: 'Highly-efficient laser with self-aligned waveguide and current confinement by selective oxidation', Paper WQ4, Tech. Dig. LEOS 1999, 1999,
    • (1999) Tech. Dig. LEOS 1999
    • Vawter, G.A.1    Blum, O.2    Allerman, A.3    Gao, Y.4
  • 6
    • 0032120084 scopus 로고    scopus 로고
    • 1.3μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer
    • IWAI, N., MUKAIHARA, T., ITOH, M., YAMANAKA, N., ARAKAWA, S., SHIMIZU, H., and KASUKAWA, A.: '1.3μm GaInAsP SL-QW Al-oxide confined inner stripe lasers on p-InP substrate with AlInAs-oxide confinement layer', Electron. Lett., 1998, 34, pp. 1427-1428
    • (1998) Electron. Lett. , vol.34 , pp. 1427-1428
    • Iwai, N.1    Mukaihara, T.2    Itoh, M.3    Yamanaka, N.4    Arakawa, S.5    Shimizu, H.6    Kasukawa, A.7
  • 7
    • 0033317961 scopus 로고    scopus 로고
    • Near room temperature CW lasing operation of a narrow-stripe oxide-confined GaInNAs/GaAs multi-quantum well laser grown by MOCVD
    • Paper WI2
    • YANG, K., HAINS, C.P., LI, N.Y., and CHENG, J.: 'Near room temperature CW lasing operation of a narrow-stripe oxide-confined GaInNAs/GaAs multi-quantum well laser grown by MOCVD'. Tech. Dig. LEOS 1999, Paper WI2
    • (1999) Tech. Dig. LEOS 1999
    • Yang, K.1    Hains, C.P.2    Li, N.Y.3    Cheng, J.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.