Metalorganic vapor phase epitaxial growth of GaNAs using tertiarybutylarsine (TBA) and dimethylhydrazine (DMHy)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 1015-1018

  Moto, Akihiro ^a   Tanaka, So ^a   Ikoma, Nobuyuki ^a   Tanabe, Tatsuya ^a   Takagishi, Shigenori ^a   Takahashi, Mitsuo ^a   Katsuyama, Tsukuru ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

Dimethylhydrazine; GaNAs; MOVPE; Rapid thermal annealing; Tertiarybutylarsine

Indexed keywords

DESORPTION; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; ORGANOMETALLICS; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR GROWTH; SUBSTRATES;

DIMETHYLHYDRAZINE; NITRIDE SEMICONDUCTORS; TERTIARYBUTYLARSINE; TRIETHYLGALLIUM;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032633502     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.1015     Document Type: Article

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