Temperature dependence of lasing wavelength in a GaInNAs laser diode

IEEE Photonics Technology Letters

Volumn 12, Issue 7, 2000, Pages 777-779

  Kondow, Masahiko ^a   Kitatani, Takeshi ^a   Nakahara, Kouji ^a   Tanaka, Toshiaki ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ENERGY GAP; LIGHT EMITTING DIODES; OPTICAL COMMUNICATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; THERMAL EFFECTS;

EDGE EMITTING LASER DIODES; OPTICAL FIBER COMMUNICATION;

QUANTUM WELL LASERS;

EID: 0034227047     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.853497     Document Type: Article

References (9)

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2. M. Kondow, T. Kitatani, M. C. Larson, K. Nakahara, K. Uomi, and H. Inoue, "Gas-source MBE of GaInNAs for long-wavelength laser diodes," J. Cryst. Growth, vol. 188, pp. 255-259, 1998.
3. T. Kitatani, K. Nakahara, M. Kondow, K. Uomi, and T. Tanaka, "A 1.3-μm GaInNAs/GaAs single-quantum-well laser diode with a high characteristic temperature over 200 K," Jpn. J. Appl. Phys., vol. 39, pp. L 86-87, 2000.
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5. T. Higashi, T. Yamamoto, and S. Ogita, "Temperature sensitivity of oscillation wavelength in 1.3 μm-GaInAsP/InP quantum-well semi-conductor lasers," 9th Meeting IEEE Laser Electro-Optics Society, pp. 10-11, 1996.
6. T Higashi, T. Yamamoto, S. Ogita, and M. Kobayashi, "Experimental analysis of temperature dependence of oscillation wavelength in quantum-well FP semiconductor lasers," IEEE J. Quantum Electron., vol. 34, pp. 1680-1689, 1998.
7. 0 long-wavelength lasers on InGaAs ternary substrate," in 1998 Conf. Laser and Electro-Optics, San Francisco, CA, 1998, pp. 293-294.
8. M. Kondow, S. Nakatsuka, T. Kitatani, Y. Yazawa, and M. Okai, "Room-temperature pulsed operation of GaInNAs laser diodes with excellent high-temperature performance," Jpn. J. Appl. Phys., vol. 35, pp. 5711-5713, 1996.
9. K. Nakahara, M. Kondow, T. Kitatani, M. C. Larson, and K. Uomi, "1.3-μm continuous-wave lasing operation in GaInNAs quantum well lasers," IEEE Photon. Technol. Lett., vol. 10, pp. 487-488, 1998.