Low threshold current density operation of GaInNAs quantum well lasers grown by metalorganic chemical vapour deposition

Electronics Letters

Volumn 36, Issue 21, 2000, Pages 1776-1777

  Kawaguchi, M ^a   Gouardes, E ^a,b   Schlenker, D ^a   Kondo, T ^a   Miyamoto, T ^a   Koyama, F ^a   Iga, K ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b OPTO+   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS;

GALLIUM INDIUM NITROGEN ARSENIDE; THRESHOLD CURRENT DENSITY;

QUANTUM WELL LASERS;

EID: 0034298103     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20001268     Document Type: Article

References (12)

1. KONDOW, M., UOMI, K., NIWA, A., KITATANI, T., WATAHIKI, S., and YAZAWA, Y.: 'GaInNAs: a novel material for long-wavelength-range laser diodes with excellent high-temperature performance', Jpn. J. Appl. Phys., 1996, 35, pp. 1273-1275
2. IGA, K.: 'Vertical cavity surface emitting lasers based on InP and related compounds - bottleneck and corkscrew'. 8th Int. Conf. Indium Phosphide and Related Materials, 1996, Paper ThA1-1, pp. 715-718
3. NAKAHARA, K., KONDOW, M., KITATANI, T., LARSON, M.C., and UOMI, K.: '1.3-μm continuous-wave lasing operation in GaInNAs quantum-well lasers', IEEE Photonics Technol. Lett., 1998, 10, (4), pp. 487-488
4. YANG, X., JURKOVIC, M.J., HEROUX, J.B., and WANG, W.I.: 'Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant', Electron. Lett., 1999, 35, (13), pp. 1081-1083
5. BORCHERT, B., EGOROV, A.Y., ILLEK, S., and RIECHERT, H.: 'Static and dynamic characteristics of 1.29-μm GaInNAs ridge-waveguide laser diodes', IEEE Photonics Technol. Lett., 2000, 12, (6), pp. 597-599
6. KAGEYAMA, T., MIYAMOTO, T., MAKINO, S., NISHIYAMA, N., KOYAMA, E., and IGA, K.: 'High-temperature operation up to 170°C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy', IEEE Photonics Technol. Lett., 2000, 12, (1), pp. 10-12
7. SATO, S., and SATOH, S.: 'Room-temperature continuous-wave operation of 1.24-μm GaInNAs lasers grown by metal-organic chemical vapor deposition', IEEE J. Sel. Topics Quantum Electron., 1999, 5, pp. 707-710
8. HÖHNSDORF, F., KOCH, J., LEU, S., STOLZ, W., BORCHERT, B., and DRUMINSKI, M.: 'Reduced threshold current densities of GaInNAs/GaAs single quantum well lasers for emission wavelengths in the range 1.28-1.3μm', Electron. Lett., 1999, 35, (7), pp. 571-572
9. LIVSHITS, D.A., EGOROV, A.YU., and RIECHERT, H.: '8W continuous wave operation of InGaAsN lasers at 1.3μm', Electron. Lett., 2000, 36, (16), pp. 1381-1382
10. PAN, Z., MIYAMOTO, T., SCHLENKER, D., SATO, S., KOYAMA, E., and IGA, K.: 'Low temperature growth of GaInNAs/GaAs quantum wells by metalorganic chemical vapour deposition using tertiarybutylarsine', J. Appl. Phys., 1998, 84, (11), pp. 6409-6411
11. SCHLENKER, D., PAN, Z., MIYAMOTO, T., KOYAMA, F., and IGA, K.: 'Effect of surface quality on overgrowth of highly strained GaInAs/GaAs quantum wells and improvement by a strained buffer layer', Jpn. J. Appl. Phys., 1999, 38, pp. 5023-5027
12. SATO, S.: 'Low threshold and high characteristic temperature 1.3μm range GaInNAs lasers grown by metalorganic chemical vapor deposition', Jpn. J. Appl. Phys., 2000, 15, pp. 3403-3405