Low-threshold 1.3-μm InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters

Volumn 12, Issue 2, 2000, Pages 128-130

  Yang, X ^a   Heroux, J B ^a   Jurkovic, M J ^a   Wang, W I ^a  

^a Columbia University ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE ACTIVE AGENTS;

BROAD-AREA LASER DIODES; SINGLE QUANTUM WELL LASER DIODES;

QUANTUM WELL LASERS;

EID: 0034135558     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.823492     Document Type: Article

References (12)

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